Integrated circuit device including field-effect transistor with controlled sizes and configurations

Abstract

An integrated circuit (IC) device including fin-type active regions parallel to each other on a substrate, the fin-type active regions extending in a first lateral direction, a first nanosheet stack apart from a fin top surface of a first fin-type active region selected from the fin-type active regions, the first nanosheet stack including at least one nanosheet facing the fin top surface of the first fin-type active region, a gate structure surrounding the first nanosheet stack, the gate structure extending in a second lateral direction, a first source/drain region in contact with one sidewall of the first nanosheet stack, and a second source/drain region in contact with another sidewall of the first nanosheet stack, wherein a greatest width of the first source/drain region is less than a greatest width of the second source/drain region in the second lateral direction may be provided.