Quantum dot device

Abstract

A silicon-based quantum device for confining charge carriers is provided. The device comprises: a substrate having a first planar region; a silicon layerwhich forms part of the substrate and includes a stepwith an edgeand a second planar region, wherein the second planar regionis substantially parallel to and offset from the first planar region; a first electrically insulating layerprovided on the silicon layer, overlying the step; a first metallic layer, provided on the first electrically insulating layer, overlying the step, arranged to be electrically connected such that a first confinement regioncan be induced in which a charge carrier or charge carriers can be confined at the edge; and a second metallic layer, provided overlying the second planar regionof the silicon layer, wherein the second metallic layer is: electrically separated from the first metallic layer; and arranged to be electrically connected such that a second confinement regioncan be induced in which a charge carrier or charge carriers can be confined only in the second planar regionof the silicon layerunder the second metallic layer, and the first confinement regionis couplable to the second confinement region; wherein the first confinement regionis displaced from the second confinement regionin a direction that is perpendicular to the edge. A method of assembling a silicon-based quantum device and a method of using a silicon-based quantum device are also provided.