The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jun. 30, 2022
Boe Technology Group Co., Ltd., Beijing, CN;
Lizhong Wang, Beijing, CN;
Guangcai Yuan, Beijing, CN;
Ce Ning, Beijing, CN;
Hehe Hu, Beijing, CN;
Nianqi Yao, Beijing, CN;
Dongfang Wang, Beijing, CN;
Zhengliang Li, Beijing, CN;
Liping Lei, Beijing, CN;
Chen Xu, Beijing, CN;
Beijing BOE Technology Development Co., Ltd., Beijing, CN;
Abstract
A thin film transistor, a shift register unit, a gate driving circuit and a display panel are provided. The M source branches and the N drain branches extend along a first direction and are arranged at intervals; in each of the P source-drain units, the M source branches and the N drain branches are alternately arranged, and M is greater than or equal to N; a semiconductor layer includes sub-channel regions between one drain branch and one source branch adjacent to each other; a sum of widths of the sub-channel regions of the P source-drain units in the first direction is W, and an average length of the sub-channel regions of the P source-drain units in a direction perpendicular to the first direction is L; 12≤W/L≤400, P, M and N are integers greater than or equal to 1, and P×N≥4.