The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Dec. 05, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Myung Gil Kang, Suwon-si, KR;
Keun Hwi Cho, Seoul, KR;
Sangdeok Kwon, Seoul, KR;
Dongwon Kim, Seongnam-si, KR;
Hyun-Seung Song, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate that includes a peripheral region, a first active pattern on the peripheral region, a first source/drain pattern on the first active pattern, a first channel pattern formed on the first active pattern and connected to the first source/drain pattern, wherein the first channel pattern includes semiconductor patterns that are stacked and spaced apart from each other, a first gate electrode that extends in a first direction and crosses the first channel pattern, a gate insulating layer interposed between the first gate electrode and the first channel pattern, a first gate contact disposed on the first gate electrode and that extends in the first direction, and a first dielectric layer interposed between the first gate electrode and the first gate contact. The first dielectric layer is interposed between the first gate contact and the first gate electrode and extends in the first direction.