Gallium oxide semiconductor structure, vertical gallium oxide-based power device, and preparation method

Abstract

The present disclosure provides a gallium oxide semiconductor structure, a vertical gallium oxide-based power device, and a preparation method. An unintentionally doped gallium oxide layer () is transferred to a highly doped and highly thermally conductive heterogeneous substrate () by bonding and thinning; then a heavily doped gallium oxide layer () is formed on the gallium oxide layer by treating and ion implantation, thereby preparing the gallium oxide semiconductor structure including the heterogeneous substrate (), the gallium oxide layer (), and the heavily doped gallium oxide layer () stacked in sequence. In the vertical gallium oxide-based power device prepared on the basis of the gallium oxide semiconductor structure, the gallium oxide layer () is a thicker intermediate layer and a carrier concentration of the gallium oxide layer () is less than that of the heavily doped gallium oxide layer (). Therefore, the breakdown voltage of the device is also increased through structural design. The highly thermally conductive heterogeneous substrate () improves the heat dissipation performance of the device. The device with multiple Fin structures provides a large amount of current.