The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Jan. 04, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jonghyeok Kim, Suwon-si, KR;

Jamin Koo, Suwon-si, KR;

Beom Seo Kim, Suwon-si, KR;

Wonseok Yoo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H10B 12/02 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/485 (2023.02);
Abstract

A semiconductor memory device including an active pattern defined by a device isolation pattern, a bit line extending in a first direction on the device isolation pattern and the active pattern, a bit line capping pattern including a first capping pattern, a second capping pattern, and a third capping pattern sequentially stacked on an upper surface of the bit line, and a shield pattern covering one side of the bit line may be provided. An upper surface of the shield pattern may be at a height lower than an upper surface of the first capping pattern.


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