The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Feb. 14, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kiseok Lee, Suwon-si, KR;
Jongmin Kim, Suwon-si, KR;
Hyo-Sub Kim, Suwon-si, KR;
Hui-Jung Kim, Suwon-si, KR;
Sohyun Park, Suwon-si, KR;
Junhyeok Ahn, Suwon-si, KR;
Chan-Sic Yoon, Suwon-si, KR;
Myeong-Dong Lee, Suwon-si, KR;
Woojin Jeong, Suwon-si, KR;
Wooyoung Choi, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a cell active pattern including a first portion and a second portion that are spaced apart from each other; a gate structure between the first portion and the second portion of the cell active pattern; a bit-line contact on the first portion of the cell active pattern; a connection pattern on the second portion of the cell active pattern; and a cell separation pattern in contact with the bit-line contact and the connection pattern, wherein the cell separation pattern includes a first sidewall in contact with the connection pattern and a second sidewall in contact with the bit-line contact, an upper portion of the second sidewall of the cell separation pattern is in contact with the bit-line contact, and a lower portion of the second sidewall of the cell separation pattern is spaced apart from the bit-line contact.