The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Oct. 05, 2022
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Kang Sik Choi, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
H10B 12/36 (2023.02); G11C 5/063 (2013.01); H10B 12/03 (2023.02); H10B 12/056 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02);
Abstract

The disclosure relates to a highly integrated memory device and a method for manufacturing the same. According to the disclosure, a memory device comprises a lower structure, an active layer horizontally oriented parallel to a surface of the lower structure, a bit line connected to a first end of the active layer and vertically oriented from the surface of the lower structure, a capacitor connected to a second end of the active layer, a word line horizontally oriented to be parallel with the active layer along a side surface of the active layer, and a fin channel layer horizontally extending from one side surface of the active layer, wherein the word line includes a protrusion covering the fin channel layer.


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