The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Mar. 14, 2024
Semiconductor Components Industries, Llc, Scottsdale, AZ (US);
Manuel H. Innocent, Wezemaal, BE;
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
The technology relates to enhanced time gated imaging in a manner that provides high dynamic range (HDR) functionality to a time gated pixel. An overflow path is provided for an integration node of a time-gated pixel, so that when the integration node saturates the excess charge flows to a low gain capacitor, creating readout signals from the integration node and the low gain capacitor, in order to obtain an HDR signal. A method includes modulating reset and transfer signals for an image sensor to selectively cause time-gated charge to accumulate in a photosensitive region of the image sensor, where the time-gated charge corresponds to a selected distance range. Then the charge is transferred to a charge storage region, and a saturated portion of the accumulated charge in stored a capacitor of the image sensor element. An HDR image is constructed from read-out of the charge storage region and the capacitor.