The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Nov. 23, 2022
Applicant:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Inventors:
Chirag Gupta, Madison, WI (US);
Shubhra S. Pasayat, Middleton, WI (US);
Assignee:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/0412 (2006.01); H03K 17/687 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/83 (2025.01); H03K 17/689 (2006.01); H03K 17/693 (2006.01);
U.S. Cl.
CPC ...
H03K 17/04123 (2013.01); H03K 17/6874 (2013.01); H10D 30/01 (2025.01); H10D 30/6733 (2025.01); H10D 62/115 (2025.01); H10D 62/8303 (2025.01); H03K 2017/6878 (2013.01); H03K 17/689 (2013.01); H03K 17/693 (2013.01);
Abstract
A bidirectional FET switch combining gate elements greatly reduces chip area and cost through the use of a dielectric layer with a high dielectric constant of a complex oxide moderating peak electrical gradients when used with or without field plates.
Gupta, Chirag. (2025). High-voltage bidirectional field effect transistor (U.S. Patent No. 12451878). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12451878
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile