The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Apr. 21, 2022
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Alaaeldien Mohamed Abdelrazek Medra, San Diego, CA (US);

Xinmin Yu, San Diego, CA (US);

Yunfei Feng, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/19 (2006.01); H03G 3/30 (2006.01); H04B 1/04 (2006.01);
U.S. Cl.
CPC ...
H03F 3/19 (2013.01); H03G 3/3036 (2013.01); H04B 1/04 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H03G 2201/103 (2013.01); H03G 2201/307 (2013.01);
Abstract

This disclosure provides systems, methods, and devices for wireless communication that support low noise amplification of mmWave radio frequency (RF) signals. In a first aspect, a low noise amplifier includes a first stage amplifier; a second stage amplifier; a configurable first stage bypass coupled between a first input and a first output of the first stage amplifier; and a configurable second stage bypass coupled between a second input and a second output of the second stage amplifier. Other aspects and features are also claimed and described.


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