The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Aug. 09, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/58 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/564 (2013.01); H01L 23/585 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract
A semiconductor device according to an embodiment includes a substrate, a transistor, an insulating layer, and a first sealing portion. The substrate includes a first region, and a second region provided to surround an outer periphery of the first region. The transistor is provided on the substrate in the first region. The insulating layer is provided above the transistor and over the first region and the second region. The first sealing portion is provided to divide the insulating layer and surround the outer periphery of the first region in the second region. The first sealing portion includes a first void.