The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Sep. 29, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ching-Tzu Chen, Ossining, NY (US);

Christian Lavoie, Pleasantville, NY (US);

Guy M. Cohen, Westchester, NY (US);

Utkarsh Bajpai, Delmar, NY (US);

Nicholas Anthony Lanzillo, Wynantskill, NY (US);

Teodor Krassimirov Todorov, Yorktown Heights, NY (US);

Oki Gunawan, Westwood, NJ (US);

Nathan P. Marchack, New York, NY (US);

Peter Kerns, Sandy Hook, CT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53209 (2013.01); H01L 21/76852 (2013.01); H01L 21/76867 (2013.01); H01L 21/76885 (2013.01); H01L 23/53223 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01); H01L 23/5329 (2013.01); Y10T 428/24479 (2015.01);
Abstract

An interconnect structure including conducting layers of topological semi-metals and/or topological insulators. To increase charge carrier density in the conducting layers, a charge carrier doping layer present on at least one surface of the one or more conductive layers of topological semi-metals. The charge carrying doping layers have a charge carrier density greater than the topological semi-metals and/or topological insulators of the one or more conductive layers.


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