Integrated circuit including high-speed device

Abstract

An integrated circuit is provided. The integrated circuit includes: an active region extending in a first direction; gate electrodes extending in a second direction in parallel with each other; source/drain regions provided on the active region between the gate electrodes; a first gate contact connected to the gate electrodes and extending in the first direction; a first gate wiring pattern provided in a first wiring layer, electrically connected to the gate electrodes through the first gate contact, and overlapping the first gate contact along a third direction perpendicular to the first and second directions; and source/drain wiring patterns provided in a second wiring layer, electrically connected to the source/drain regions, respectively, extending in parallel with the second direction, and overlapping the source/drain regions along the third direction, the second wiring layer being provided on the first wiring layer.