The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Jun. 30, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Eui Bok Lee, Suwon-si, KR;

Rak Hwan Kim, Suwon-si, KR;

Jong Min Baek, Suwon-si, KR;

Moon Kyun Song, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

A semiconductor device a first fin-shaped pattern provided at a first surface of a substrate and extending in a second direction, a first source/drain pattern disposed on the first fin-shaped pattern and connected thereto, a first source/drain contact disposed on the first source/drain pattern and connected thereto, a buried conductive pattern extending through the substrate and connected to the first source/drain contact, a contact connection via disposed between the first source/drain contact and the buried conductive pattern. The contact connection via is directly connected to the first source/drain contact and a back wiring line disposed on a second surface of the substrate and connected to the buried conductive pattern. A width of the contact connection via increases as the contact connection via extends away from the second surface. A width of the first source/drain contact decreases as the first source/drain contact extends away from the second surface of the substrate.


Find Patent Forward Citations

Loading…