The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Nov. 26, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sunyoung Noh, Suwon-si, KR;
Euibok Lee, Suwon-si, KR;
Wandon Kim, Seongnam-si, KR;
Minjoo Lee, Suwon-si, KR;
Hyunbae Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate with an active region, a first interlayer insulating layer on the substrate, a first wiring in the first interlayer insulating layer that is electrically connected to the active region, an insulating pattern on the first interlayer insulating layer and that has a first opening exposing the first wiring, a double etch stop layer having lower and upper etch stop patterns on the insulating pattern and the first wiring, and including a second opening exposing a portion of the first wiring, a second interlayer insulating layer on the upper etch stop pattern and having a via hole connected to the second opening, the via hole having a rounded top corner region, a second wiring in the second interlayer insulating layer, and a via connecting the portion of the first wiring and the second wiring through the second opening and the via hole.