The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Sep. 26, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Youngsang Cho, Seongnam-si, KR;

Heeseok Lee, Suwon-si, KR;

Yunhyeok Im, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/5383 (2013.01); H01L 23/5389 (2013.01); H01L 25/0657 (2013.01); H01L 24/05 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06568 (2013.01);
Abstract

A semiconductor package includes a first interconnection structure, a first semiconductor chip disposed on the first interconnection structure and including a plurality of through-vias and first pads connected to the plurality of through-vias; a second semiconductor chip disposed on the first interconnection structure, including second pads electrically connected to the first pads, and having a size different from a size of the first semiconductor chip; a heat dissipation structure contacting and surrounding side surfaces of at least one of the first semiconductor chip and the second semiconductor chip, and including a material having higher thermal conductivity than a thermal conductivity of silicon; and an encapsulant surrounding side surfaces of the heat dissipating structure.


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