The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jan. 21, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Kohei Nishiguchi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/265 (2006.01); H01L 21/67 (2006.01); H01L 21/68 (2006.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 62/834 (2025.01);
U.S. Cl.
CPC ...
H01L 22/30 (2013.01); H01L 21/26506 (2013.01); H01L 21/681 (2013.01); H01L 22/12 (2013.01); H10D 62/124 (2025.01); H01L 21/67259 (2013.01); H10D 62/8325 (2025.01); H10D 62/834 (2025.01);
Abstract
A semiconductor wafer device according to the present invention includes a SiC substrate having an upper surface and a rear surface as a surface on the opposite side to the upper surface, and an impurity implantation layer provided on the entire rear surface of the SiC substrate, formed of a same base material as that forming the SiC substrate, including an impurity, and having a lower transmittance of visible light or infrared light than that of the SiC substrate.