The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Feb. 01, 2024
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Hyo Sub Yeom, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H10B 43/27 (2023.02); H10B 43/40 (2023.02); H10D 84/01 (2025.01);
Abstract
There may be presented a method of manufacturing a semiconductor chip. A first layer stack in which first material layers and second material layers are alternately stacked is formed over a semiconductor substrate including a chip region and a scribe lane region, and first crack propagation guides are formed on the first layer stack. A second layer stack is formed on the first layer stack and the first crack propagation guides, and second crack propagation guides are formed. A semiconductor chip is separated from the semiconductor substrate.