Memory device supporting word line holding operation and operating method of the same

Abstract

A memory device including: a memory device may include: a memory cell array, and a controller configured to perform program loops each comprising a voltage application operation, a word line holding operation, and a verification operation until a program operation for selected memory cells is successful, during the word line holding operation, apply a holding pass voltage having a higher level than a ground voltage to each of first word lines having a program state and second word lines having an erase state, which belong to unselected word lines among a plurality of word lines, during the verification operation, apply a verification pass voltage having a higher level than the holding pass voltage to K word lines that belong to the first word lines and the second word lines, and apply the holding pass voltage to remaining word lines except the K word lines, among the second word lines.