The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Aug. 07, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jihyun Park, Suwon-si, KR;
Jungyu Lee, Suwon-si, KR;
Yumin Kim, Suwon-si, KR;
Chiweon Yoon, Suwon-si, KR;
Eunchan Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
The present disclosure provides for memory apparatuses and systems including noise cancellation circuits, and operating methods thereof. In some embodiments, a memory device includes a first pad, a memory cell plane comprising a plurality of memory cells, a page buffer circuit, and a noise cancellation circuit. The page buffer circuit is configured to sense the memory cell plane, and identify, based on the sensing of the memory cell plane, a state stored in a memory cell of the plurality of memory cells, according to a ground voltage. The noise cancellation circuit is configured to receive a first ground voltage from the first pad, determine a reference voltage based on the first ground voltage, generate a second ground voltage that offsets a noise voltage, based on the reference voltage, and output the second ground voltage to the page buffer circuit.