The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Dec. 13, 2023
Denso Corporation, Kariya, JP;
Masataka Deguchi, Kariya, JP;
Junya Muramatsu, Nagakute, JP;
Keita Kataoka, Nagakute, JP;
Katsuhiro Kutsuki, Nagakute, JP;
Isao Aoyagi, Nagakute, JP;
Takashi Tominaga, Nagakute, JP;
Ryosuke Okachi, Nagakute, JP;
Takashi Kohyama, Toyota, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
Main cells that constitute a semiconductor element having a trench gate structure include first cells, and second cells having a structure in which gate insulating films are more easily broken by energization than those in the first cells, and the number of which is smaller than that of the first cells. At a time of driving the semiconductor element, a common gate drive voltage is applied to gate electrodes of the first cells and the second cells. An electrical characteristic is measured to detect failure of the second cells due to energization at the time of driving. The gate electrodes of the failed second cells are electrically isolated from the gate electrodes of the first cells so that the gate drive voltage is not applied to the failed second cells. The failure of the first cells is predicted based on the failure of the second cells.