The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Oct. 28, 2021
Soulbrain Co., Ltd., Seongnam-si, KR;
Changbong Yeon, Seongnam-si, KR;
Jaesun Jung, Seongnam-si, KR;
Hyeran Byun, Seongnam-si, KR;
Taeho Song, Seongnam-si, KR;
Sojung Kim, Seongnam-si, KR;
Seokjong Lee, Seongnam-si, KR;
SOULBRAIN CO., LTD., Gyeonggi-do, KR;
Abstract
Disclosed are a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom. The growth inhibitor for forming a thin film is represented by Chemical Formula 1: AnBmXo [Chemical Formula 1]. A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1. It is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.