The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Dec. 05, 2022
Nanjing Suman Plasma Eri. Co., Ltd., Jiangsu, CN;
NJ Tianliang Bioengineering Technology Co., Ltd., Jiangsu, CN;
Nanjing Agricultural University, Jiangsu, CN;
Xilin Hou, Nanjing, CN;
Dong Xiao, Nanjing, CN;
Ying He, Nanjing, CN;
Ying Li, Nanjing, CN;
Jianhao Zhang, Nanjing, CN;
Jinglin Wan, Nanjing, CN;
Nanjing Suman Plasma ERI. Co., Ltd., Jiangsu, CN;
NJ Tianliang Bioengineering Technology Co., Ltd., Jiangsu, CN;
NANJING AGRICULTURAL UNIVERSITY, Jiangsu, CN;
Abstract
The present disclosure relates to a method for activating a crop seed by high-voltage electric field cold plasma (HVCP), and use thereof, belonging to the technical field of crop planting. The present disclosure provides a method for activating a crop seed by HVCP, including the following steps: (1) mixing a crop seed with water and immersing the crop seed in water for 4 h to 24 h to obtain an immersed crop seed; and (2) conducting discharge activation on the immersed crop seed at a voltage of 80 kV to 130 kV to obtain an activated crop seed. In the present disclosure, the method can improve heat-resistant and disease-resistant properties of crops, and provide a scientific basis for subsequent acquisition of excellent seeds.