Electrochemical random access memory device with contact layer as a heat source

Abstract

Technologies related to an electrochemical random access memory (ECRAM) device are described herein. The ECRAM device includes a channel layer, an electrolyte layer, a reservoir layer, and a conductive contact layer, where the conductive contact layer is in contact with the reservoir layer. A voltage source is coupled to the contact layer and is configured to cause current to flow laterally across the contact layer from one side to another, resulting in the contact layer emitting heat by way of Joule heating. When the ECRAM device is heated to a sufficiently high temperature, a second voltage is applied across the stack of layers, thereby causing ion transport between the reservoir layer and the channel layer.