The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Jun. 01, 2023
Applicant:

Idemitsu Kosan Co., Ltd., Tokyo, JP;

Inventors:

Yukitoshi Jinde, Tokyo, JP;

Hisato Matsumoto, Tokyo, JP;

Keiichi Yasukawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 85/60 (2023.01); H10K 50/11 (2023.01);
U.S. Cl.
CPC ...
H10K 85/657 (2023.02); H10K 85/654 (2023.02); H10K 85/6572 (2023.02); H10K 85/658 (2023.02); H10K 50/11 (2023.02);
Abstract

An emitting layer of an organic EL device contains a fluorescent first compound, a delayed fluorescent second compound, and a third compound that satisfy numerical formulae (Numerical Formula 1) to (Numerical Formula 4). (Numerical Formula 1): |Af(M1)−Af(M2)|≤0.40 eV, (Numerical Formula 2): Ip(M2)≥5.75 eV, (Numerical Formula 3): |Ip(M2)−Ip(M3)|≤0.25 eV, (Numerical Formula 4): S(M3)≥S(M2). Af(M1) is an affinity of the first compound, Af(M2) is an affinity of the second compound, Ip(M2) is an ionization potential of the second compound, S(M2) is a lowest singlet energy of the second compound, Ip(M3) is an ionization potential of the third compound, and S(M3) is a lowest singlet energy of the third compound.


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