The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Oct. 21, 2022
Playnitride Display Co., Ltd., MiaoLi County, TW;
Chee-Yun Low, MiaoLi County, TW;
Yun-Syuan Chou, MiaoLi County, TW;
Hung-Hsuan Wang, MiaoLi County, TW;
Pai-Yang Tsai, MiaoLi County, TW;
Fei-Hong Chen, MiaoLi County, TW;
Tzu-Yang Lin, MiaoLi County, TW;
PlayNitride Display Co., Ltd., MiaoLi County, TW;
Abstract
A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.