The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Apr. 29, 2022
Applicant:

Playnitride Display Co., Ltd., MiaoLi County, TW;

Inventors:

Shen-Jie Wang, MiaoLi County, TW;

Kuang-Yuan Hsu, MiaoLi County, TW;

Assignee:

PlayNitride Display Co., Ltd., MiaoLi County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/81 (2025.01); H10H 20/815 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/8215 (2025.01); H10H 20/815 (2025.01); H10H 20/8252 (2025.01);
Abstract

An epitaxial structure includes a quantum well structure, a first type semiconductor layer, and a second type semiconductor layer. The quantum well structure has an upper surface and a lower surface opposite to each other and includes at least one quantum well layer and at least one quantum barrier layer stacked alternately. The quantum well layer includes at least one patterned layer, and the patterned layer includes multiple geometric patterns. The first type semiconductor layer is disposed on the lower surface of the quantum well structure. The second type semiconductor layer is disposed on the upper surface of the quantum well structure.


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