The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Aug. 23, 2022
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Delfo Nunziato Sanfilippo, Catania, IT;

Piero Fallica, Catania, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/225 (2025.01); G01S 7/4863 (2020.01); H10F 71/00 (2025.01); H10F 77/14 (2025.01);
U.S. Cl.
CPC ...
H10F 30/225 (2025.01); G01S 7/4863 (2013.01); H10F 71/121 (2025.01); H10F 77/148 (2025.01);
Abstract

The present disclosure is directed to an opto-electronic device of semiconductor material formed in a semiconductor layer of a first conductivity type having a thickness and accommodating at least one deep region of a second conductivity type. The deep region forms a PN junction with the semiconductor layer. The deep region has a depth greater than the width. The deep region is formed by a bottom portion contiguous to a first layer portion of the semiconductor layer; a surface portion contiguous to a second layer portion of the semiconductor layer; and an intermediate portion contiguous to a third layer portion. The concentration of the third layer portion is greater than that of the first and second layer portions.


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