The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Apr. 29, 2024
Applicant:

Huawei Technologies Co., Ltd., Guangdong, CN;

Inventors:

Huaifeng Wang, Shenzhen, CN;

Jiangtao Yang, Shanghai, CN;

Hang Wang, Dongguan, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H02H 9/04 (2006.01); H03K 19/003 (2006.01);
U.S. Cl.
CPC ...
H10D 89/814 (2025.01); H02H 9/046 (2013.01); H03K 19/00315 (2013.01); H10D 89/611 (2025.01); H10D 89/815 (2025.01);
Abstract

This application relates to a charging protection circuit. The charging protection circuit implements overcurrent protection by using a four-terminal NMOS switching transistor. In the solution provided in this application, floating management is performed on a Sub port of the four-terminal NMOS switching transistor. Specifically, when the four-terminal NMOS switching transistor is turned on, potential of the Sub port is pulled up, to avoid an excessively large internal resistance of the four-terminal NMOS switching transistor caused by an excessively large voltage between the Sub port and a drain of the four-terminal NMOS switching transistor. In addition, this application further provides a charging circuit and an electronic device.


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