The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Mar. 29, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyungsoo Kim, Hwaseong-si, KR;

Kyenhee Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/01 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/853 (2025.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 84/0167 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01);
Abstract

An integrated circuit semiconductor element includes: a substrate; a complementary field effect transistor (FET) (cFET) formed over the substrate and having a quadruple-gate structure, in which nano sheet stacked structures are sequentially stacked; and a planar FET having a mono-gate structure or a zebra fin FET (ZE FINFET) having a triple-gate structure, which are formed over the substrate.


Find Patent Forward Citations

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Kim, Kyungsoo. (2025). Integrated circuit semiconductor element having heterogeneous gate structures and method of fabricating integrated circuit semiconductor element (U.S. Patent No. 12446304). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12446304

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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