The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Mar. 13, 2023
SK Hynix Inc., Gyeonggi-do, KR;
Jun Sik Kim, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device includes: an isolation layer formed to define active regions including active fins in a substrate; gate trenches extending across the active fins and the isolation layer; and buried gates that fill the gate trenches, and include fin gates disposed on sidewalls of the active fins, active gates disposed over the active fins, and passing gates disposed over the isolation layer, wherein bottom surfaces of the passing gates are disposed at a higher level than bottom surfaces of the active gates, and bottom surfaces of the fin gates are disposed at a lower level than the bottom surfaces of the active gates.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile