The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Apr. 28, 2021
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Helmut Brech, Lappersdorf, DE;
John Twynam, Regensburg, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H01L 21/765 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/111 (2025.01); H01L 21/765 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 30/4755 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 64/01 (2025.01);
Abstract
A Group III nitride-based transistor device is provided that has a gate drain capacitance (C), a drain source capacitance (C) and a drain source on resistance (RDSon). A ratio of the gate drain capacitance (C) at a drain source voltage (V) of 0V, C(0V), and the gate drain capacitance Cat a value of V>0V, CV, is at least 3:1, wherein Vis less than 15V.