The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Nov. 08, 2019
Sumitomo Chemical Company, Limited, Tokyo, JP;
Takehiro Yoshida, Hitachi, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
A method for manufacturing a nitride semiconductor substrate by using a vapor phase growth method, including: a step of preparing a base substrate of a single crystal of a group III nitride semiconductor and in which a low index crystal plane closest to a main surface is a (0001) plane; an etching step of the base substrate to roughen the main surface; a first step of growing a first layer by epitaxially growing a single crystal of a group III nitride semiconductor on the main surface, and at least some of the plurality of recessed portions being gradually expanded toward an upper side of the main surface of the base substrate, the first layer including a first surface from which the (0001) plane has disappeared and that is constituted only by the inclined interfaces; and a second step of growing a second layer including a mirror second surface.