The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Dec. 14, 2022
Monolithic Power Systems, Inc., Kirkland, WA (US);
Ignacio Cortes Mayol, Spain, IT;
Monolithic Power Systems, Inc., Kirkland, WA (US);
Abstract
A semiconductor device having a termination region comprising deep trench isolation ('DTI'). The termination region may be formed in a semiconductor layer of a first conductivity type and may include a vertical path cell of a second conductivity type vertically extended into the semiconductor layer with a vertical path cell depth, a first type deep trench termination cell (“DTTC”) disposed laterally immediately next to the vertical path cell and including a first DTI and a first well region of the second conductivity type disposed laterally immediately next to the first DTI, and a second type DTTC having a second DTI disposed laterally immediately next to the first type DTTC, and a second well region of the first conductivity type disposed laterally immediately next to the second DTI.