The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Apr. 14, 2021
Rohm Co., Ltd., Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A nitride semiconductor device includes an electron transit layer, an electron supply layer that is formed on the electron transit layer, a gate layer that is formed on the electron supply layer and contains an AlGaN (0<X<1) based material containing a first impurity, a gate electrode that is formed on the gate layer and is in Schottky junction with the gate layer, and a source electrode and a drain electrode that are electrically connected to the electron supply layer. By this arrangement, a gate withstand voltage can be improved and therefore, a nitride semiconductor device of high reliability can be provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile