The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Feb. 21, 2025
Applicant:
Zinite Corporation, Edmonton, CA;
Inventors:
Douglas W. Barlage, Edmonton, CA;
Lhing Gem Shoute, Edmonton, CA;
Kenneth C. Cadien, Edmonton, CA;
Alex Munnlick Ma, Edmonton, CA;
Eric Wilson Milburn, Edmonton, CA;
Assignee:
ZINITE CORPORATION, Edmonton, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/552 (2006.01); H01L 25/065 (2023.01); H01L 25/16 (2023.01); H10D 89/60 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6713 (2025.01); H01L 23/481 (2013.01); H01L 23/5286 (2013.01); H01L 23/552 (2013.01); H01L 25/0657 (2013.01); H01L 25/16 (2013.01); H10D 30/6728 (2025.01); H10D 30/6755 (2025.01); H10D 30/6758 (2025.01); H10D 89/60 (2025.01); H10D 99/00 (2025.01); H01L 2225/06541 (2013.01);
Abstract
Novel semiconductor devices are taught. The novel devices include a thin film transistor (TFT) with an n-type semiconductor layer to form a channel between a source and a drain. The TFT further includes a source-channel interfacial member adjacent to at least the source contact of the device to provide depletion layer control of the operation of the TFT.