The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
May. 20, 2021
Applicant:
Macom Technology Solutions Holdings, Inc., Lowell, MA (US);
Inventors:
Assignee:
MACOM Technology Solutions Holdings, Inc., Lowell, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H01L 21/263 (2006.01); H10D 62/17 (2025.01); H10D 62/824 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/4755 (2025.01); H01L 21/263 (2013.01); H10D 62/221 (2025.01); H10D 62/824 (2025.01); H10D 64/111 (2025.01);
Abstract
A transistor device includes a semiconductor structure, source and drain contacts on the semiconductor structure, a gate on the semiconductor structure between the source and drain contacts, and a surface passivation layer on the semiconductor structure between the gate and the source or drain contact. The surface passivation layer includes an opening therein that exposes a first region of the semiconductor structure for processing the first region differently than a second region of the semiconductor structure adjacent the gate. Related devices and fabrication methods are also discussed.