The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Apr. 11, 2023
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Assignee:
Imec VZW, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); H01L 23/528 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/82 (2025.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H01L 23/5286 (2013.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 84/82 (2025.01);
Abstract
A standard cell semiconductor device is provided that includes a first and second FET device, each including: (i) a source body and a drain body, each including a common source or drain body portion and a set of source or drain prongs protruding from the common source or drain body portion, (ii) a set of channel layers, each channel layer extending between a pair of source and drain prongs, and (iii) a gate body including a common gate body portion and a set of gate prongs protruding from the common gate body portion.