The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Dec. 02, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Song Yi Kim, Yongin-si, KR;
Junghyun Cho, Anyang-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A variable resistance memory device includes a memory cell structure on a substrate, the memory cell structure including conductive layers, each of the conductive layers including conductive lines spaced apart from each other in a direction parallel to a top surface of the substrate, and memory cell arrays alternatingly stacked with the conductive layers in a first direction perpendicular to a top surface of the substrate, a first peripheral circuit layer between the substrate and the memory cell structure, the first peripheral circuit layer including first transistors, and a second peripheral circuit layer between the first peripheral circuit layer and the memory cell structure, the second peripheral circuit layer including second transistors, and the second transistors including core transistors that are connected to corresponding ones of the conductive lines.