The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Dec. 09, 2022
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Joong Sik Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2023.01); H10B 51/20 (2023.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H10B 51/20 (2023.02);
Abstract

A semiconductor device according to an embodiment includes a substrate, a bit line and a source line extending in a vertical direction substantially perpendicular to a surface of the substrate, a semiconductor layer disposed between the source line and the bit line on a plane substantially parallel to the surface of the substrate, a non-ferroelectric layer pattern disposed on the semiconductor layer, a floating electrode layer pattern disposed on the non-ferroelectric layer pattern, a ferroelectric layer pattern disposed on the floating electrode layer pattern, and a word line disposed on the ferroelectric layer pattern. An overlap area between the floating electrode layer pattern and the non-ferroelectric layer pattern in the vertical direction is greater than an overlap area between the ferroelectric layer pattern and the word line in the vertical direction.


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