The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Mar. 16, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ki Won Kim, Seongnam-si, KR;

Sung Hoon Kim, Seongnam-si, KR;

Ah Reum Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2023.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 41/41 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); H01L 23/5226 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H10B 41/41 (2023.02); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A semiconductor memory device including a memory cell array and a peripheral circuit element configured to control an operation of the memory cell array, and a wiring structure including first and second wiring structures spaced apart from each other on the peripheral circuit element, a first voltage and a second voltage different from the first voltage applied to two opposite ends of the first wiring structure, respectively, and a third voltage different from the first and second voltages applied to the second wiring structure, may be provided. The first wiring structure includes first lines extended in a first direction and spaced apart from each other in a second direction crossing the first direction, the second wiring structure includes second lines extended in the first direction and spaced apart from each other in the second direction, and one of the first lines is between the second lines.


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