The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Mar. 02, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Hiroki Kitayama, Yokkaichi Mie, JP;

Tomotaka Ariga, Yokkaichi Mie, JP;

Mitsuo Ikeda, Yokkaichi Mie, JP;

Daisuke Ikeno, Yokkaichi Mie, JP;

Akihiro Kajita, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02);
Abstract

According to one embodiment, a semiconductor storage device includes a memory pillar extending in a first direction. The memory pillar includes a tunnel insulation film, a charge storage layer on the tunnel insulation film, and a first block insulation film on the charge storage layer. A conductor layer extends in a second direction intersecting the first direction to meet a portion of the memory pillar. The conductor layer includes a first layer comprising molybdenum and a second layer comprising tungsten. The first layer is between the memory pillar and the second layer in the second direction.


Find Patent Forward Citations

Loading…