The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Oct. 24, 2023
Applicant:

Samsung Sdi Co., Ltd., Yongin-si, KR;

Inventors:

Hyejin Kim, Yongin-si, KR;

Pil Jin Yoo, Yongin-si, KR;

Deok-Hyun Kim, Yongin-si, KR;

Youngugk Kim, Yongin-si, KR;

Jaehou Nah, Yongin-si, KR;

Ilyoung Choi, Yongin-si, KR;

Eunji Kang, Yongin-si, KR;

Sunil Park, Yongin-si, KR;

Jaewon Kim, Yongin-si, KR;

Doori Oh, Yongin-si, KR;

Yookyung Kim, Yongin-si, KR;

Narae Kim, Yongin-si, KR;

Banseok Lee, Yongin-si, KR;

Assignee:

SAMSUNG SDI CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/38 (2006.01); H01M 4/36 (2006.01); H01M 4/583 (2010.01); H01M 4/62 (2006.01); H01M 10/0525 (2010.01); H01M 10/44 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); H01M 4/366 (2013.01); H01M 4/583 (2013.01); H01M 4/62 (2013.01); H01M 10/0525 (2013.01); H01M 10/44 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01);
Abstract

A negative active material includes a core having a silicon-carbon composite and a polymer coating layer formed on the core, wherein the negative active material has about 1.02 to about 1.6 of a ratio of height of N1s peak occurring at about 400±about 0.5 eV relative to a height of N1s peak occurring at about 405±about 0.5 eV of a bonding energy, and about 1.02 to about 3.0 of a ratio of a height of C1s peak occurring at about 286.5±about 0.5 eV relative to a height of C1s peak occurring at about 290±about 0.5 eV when an X-ray photoelectron spectroscopy (XPS) is measured.


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