The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Sep. 20, 2022
Applicant:
Skorpios Technologies., Inc., Albuquerque, NM (US);
Inventors:
Stephen B. Krasulick, Albuquerque, NM (US);
John Dallesasse, Geneva, IL (US);
Assignee:
Skorpios Technologies, Inc., Albuquerque, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01); H01L 25/00 (2006.01); H01L 25/075 (2006.01); H01L 25/16 (2023.01); H10H 20/01 (2025.01); H10H 20/84 (2025.01); H10H 20/85 (2025.01); H10H 20/857 (2025.01); H01S 5/02 (2006.01); H01S 5/0237 (2021.01); H01S 5/10 (2021.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 25/0753 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); G02B 6/12002 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12147 (2013.01); G02B 6/1225 (2013.01); G02B 6/136 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01); H01S 5/021 (2013.01); H01S 5/0237 (2021.01); H01S 5/1003 (2013.01); H10H 20/018 (2025.01); H10H 20/84 (2025.01); H10H 20/8506 (2025.01); H10H 20/857 (2025.01);
Abstract
A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.