The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

May. 19, 2022
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Shoji Takei, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05565 (2013.01); H01L 2224/0569 (2013.01); H01L 2924/066 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/351 (2013.01);
Abstract

A semiconductor device includes: a semiconductor chip having an element forming surface; an insulating layer formed on the element forming surface; a pad wiring layer including a first conductive layer formed on the insulating layer and containing a first conductive material and a second conductive layer formed on the first conductive layer and containing a second conductive material different from the first conductive material, wherein the second conductive layer includes an eaves portion protruding outward with respect to an end surface of the first conductive layer; a bonding member bonded to the pad wiring layer and supplying electric power to an element of the element forming surface; and a coating insulating film selectively formed on the insulating layer below the eaves portion, exposing an upper surface of the insulating layer to a peripheral region of the pad wiring layer, and covering the end surface of the first conductive layer.


Find Patent Forward Citations

Takei, Shoji. (2025). Semiconductor device and method of manufacturing the semiconductor device (U.S. Patent No. 12444704). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12444704

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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