The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Mar. 11, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Jee Woong Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H10B 10/125 (2023.02);
Abstract

A semiconductor device includes a substrate having first and second surfaces, first to third conductive line structures disposed on the first surface, extending in a first direction, and spaced apart from each other in a second direction, and a SRAM unit cell disposed on the first surface, and including first and second inverters connected to each other, a first pass transistor connected to the first inverter, a second pass transistor connected to the second inverter, a first gate electrode included in the first inverter, and a second gate electrode included in the first pass transistor, the first inverter and the first pass transistor are disposed between the first and third conductive line structures, the second inverter and the second pass transistor are disposed between the second and third conductive line structures, and the first and second gate electrodes are disposed between the first and third conductive line structures.


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