The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Sep. 01, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yasunori Iwashita, Yokkaichi Mie, JP;

Shinya Arai, Yokkaichi Mie, JP;

Keisuke Nakatsuka, Kobe Hyogo, JP;

Hiroaki Ashidate, Mie Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H10B 41/20 (2023.01); H10B 43/20 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/5226 (2013.01); H01L 24/80 (2013.01); H10B 41/20 (2023.02); H10B 43/20 (2023.02); H01L 2224/8012 (2013.01); H01L 2224/80123 (2013.01); H01L 2224/80129 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a first metal pad in each of a plurality of first regions on a first substrate so that warpage is generated on the first substrate. The method further includes forming a second metal pad in each of a plurality of second regions on a second substrate via a predetermined pattern. The method further includes bonding, after forming the first metal pad and the second metal pad, the first substrate with the second substrate. Moreover, the method further includes: making a correction, at a time of forming the predetermined pattern in each of the plurality of second regions on the second substrate, to change a position of the predetermined pattern in each of the plurality of second regions in a direction of being closer to a center of the second substrate for a first direction and to change the position of the predetermined pattern in a direction of being farther from the center of the second substrate for a second direction.


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