The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Apr. 13, 2022
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventor:

Yaojian Leng, Vancouver, WA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01F 17/00 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10D 1/20 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01F 17/0013 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/53223 (2013.01); H10D 1/20 (2025.01); H01F 2017/002 (2013.01); H01F 2017/0073 (2013.01); H01F 2017/0086 (2013.01);
Abstract

A device includes an integrated inductor and metal interconnect formed in an integrated circuit (IC) structure. The integrated inductor includes an inductor wire having a portion defined by an inductor element stack including (a) a metal layer inductor element formed in a metal layer in the IC structure and (b) a multi-component via layer inductor element formed in a via layer in the IC structure vertically adjacent the metal layer, and conductively connected to the metal layer inductor element. The multi-component via layer inductor element includes a via layer inductor element cup-shaped component formed from a first metal, and a via layer inductor element fill component formed from a second metal in an opening defined by the via layer inductor element cup-shaped component. The metal interconnect includes a metal layer interconnect element formed in the metal layer, and an interconnect via formed in the via layer from the first metal.


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