The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Jul. 06, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyuwon Choi, Suwon-si, KR;

Chanho Lee, Suwon-si, KR;

Hyeongcheol Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4099 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4099 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01);
Abstract

A static random access memory includes a memory cell that stores data, a reference voltage generator that generates a reference voltage, a precharge circuit that is connected with the memory cell through a bit line, is connected with the reference voltage generator through a reference bit line, and pre-charges the bit line and the reference bit line, and a sense amplifier that is connected with the bit line and the reference bit line, compares a voltage of the bit line and a voltage of the reference bit line to generate a comparison result, and determines a value of the data stored in the memory cell based on the comparison result. The reference voltage generator includes first-type transistors.


Find Patent Forward Citations

Loading…